FF225R12ME4 - Infineon Polska Sales

BRAND	Infineon
Product	FF225R12ME4
Description	IGBT Silicon Modules
Internal code	IMP1344518
Weight	0.35
Custom code	85359000
Technical specification	INFINEON TECHNOLOGIES AG MODULE IGBT 1200V 225A Product: IGBT Silicon Modules Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.15 V Continuous Collector Current at 25 C: 225 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 1050 W Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C Packaging: Tray Brand: Infineon Technologies Maximum Gate Emitter Voltage: 20 V Mounting Style: Chassis Mount Product Type: IGBT Modules Series: Trench/Fieldstop IGBT4 - E4

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