BRAND | Infineon |
Product | FF200R12KT4 |
Description | IGBT Module |
Internal code | IMP4751131 |
Technical specification | Configuration: Dual Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 1.75 V Continuous Collector Current at 25 C: 320 A Gate-Emitter Leakage Current: 400 nA Pd - Power Dissipation: 1100 W |
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IGBT Module
Package Info**: PG-TO262-3 Tube
Diode
IGBT
IGBT
transistor
Module
Discrete semiconductor modules
IGBT Power Module
Discrete Semiconductor Modules
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